AP15G03NF PDFN5*6-8L N+P-Channel MOSFET Field-Effect Transistor In Stock

This product is a versatile N+P-Channel MOSFET Field-Effect Transistor designed for efficient electronic switching and amplification applications. Packaged in a compact PDFN5*6-8L format, it is ideal for use in high-performance circuits where space is a concern. The transistor delivers reliable performance with low on-resistance and fast switching speeds, making it suitable for various power management tasks in electronic devices. With its robust construction and thermal efficiency, this MOSFET ensures enhanced durability and optimal functionality in demanding environments. The product is readily available for prompt integration into your electronic projects. Encapsulation: PDFN5*6-8L FET Type: N+P Drain-source Voltage (Vdss): 30V Drain Current(Id): 18A Drain-Source On-Resistance (RDS On): Less than 22mΩ Gate-source Voltage (Vgs): ±20 V Operating Temperature Range: -55 to 150 ℃ Installation Type: Patches Environmental Thermal Resistance Junction: 55 ℃/W Manufacture country: China Instructions included: No